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2h 2010 product selection guide samsung semiconductor, inc. me m ory & storage
samsung semiconductor, inc. samsung offers the industrys broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. its d ra m, fash and s ra m products are found in computersfrom ultra-mobile portables to powerful servers and in a wide range of handheld devices such as smartphones and mp3 players. samsung also delivers the industrys widest line of storage products. these include optical and hard disk drives as well as fash storage, such as the all-fash solid state drive and a range of embedded and removable fash storage products. www.samsung.com/us/business/components mobile/wireless notebook pcs desktop pcs/workstations servers networking/ communications consumer electronics aopnr i dr am s r am f l ash as ic lo g ic t f t / lcd odd /h dd
sto r a g e fu sio n m c p s r a m f l a s h d r a m dr am www.samsung.com/semi/dram 4 d ff56d f57w 4 d ff58d f57w 4 d ff5d f57w 4 d f57w 4 d w.samud f57w 4 d 5f57w 4 d 9cmh1ahodff5d f57w 4 d f57wd0caucatddutn.ckmea.t pages 4-13 m ulti - c h i p pa c kag e www.samsung.com/semi/mcp 4 d /7/fdgdf57w 4 d 0tu/7/fdgdf57w 4 d ymurt0tu/7/fdgdf57w 4 d 0tu/7/fdgdf57wdgd0tuf57w 4 d k.oa/7/fdgd/7/fdgdf57w 4 d /05dgdbe57w 4 d /05dgdf57w pages 21-22 fusion memory www.samsung.com/semi/fusion 4 d k.oa/7/fz 4 d 0tuf57wz hamanufacturers repsr 4ddymmo1d .maad emeudfcaouo optical disk drives www.samsungodd.com 4ddsreuctmmdf&f 4dduteuctmmdf&f 4dduteuctmmdp0wp0 4dduteuctmmdpf pages 23 s tor ag e pages 24-27 h i gh sp eed s r am www.samsung.com/semi/sram 4 d 7oih1c.t.vo 4 d ith1c.t.vo 4 d /e57wz 4 d (meutgcaeud5t5d 57w 4 d ff5dnduudnduuvd 57w 4 d ,f5dnduudnduuvd 57w pages 17-20 f l ash www.samsung.com/semi/flash 4 d (pdymmo1 4 d w(pdymmo1 4 d fdmtadkahc. fdpmcao 4 d ymmo1d0caucatddutn.ckmea.t pages 14-16 ssd www.samsungssd.com 4 d 7q7d fd hard drive www.samsung.com/hdd optical disc www.samsungodd.com
4 2h 2010 ddr3 sdr am re gis tered modules density voltage organization part number composition compliance speed (mbps) ranks production 1gb 1.5v 128mx72 m393b2873fh0-c(f8/h9/k0*)(04/05) 1gb (128m x8) * 9 lead free & halogen free 1066/1333 1 now 2gb 1.5v 256mx72 m393b5673fh0-c(f8/h9/k0*)(04/05) 1gb (128m x8) * 18 lead free & halogen free 1066/1333 2 now m393b5670fh0-c(f8/h9/k0*)(04/05) 1gb (256m x4) * 18 lead free & halogen free 1066/1333 1 now 4gb 1.5v 512mx72 m393b5173fh0-cf8(04/05) 1gb (128m x8) * 36 lead free & halogen free 1066/1333 4 now m393b5170fh0-c(f8/h9/k0*)(04/05) 1gb (256m x4) * 36 lead free & halogen free 1066/1333 2 now m393b5273ch0-c(f8/h9/k0*)(04/05) 2gb (256m x8) * 18 lead free & halogen free 1066/1333 2 now m393b5270ch0-c(f8/h9/k0*)(04/05) 2gb (512m x4) * 18 lead free & halogen free 1066/1333 1 now 8gb 1.5v 1gx72 m393b1k73ch0-cf8(04/05) 2gb (256m x8) * 36 lead free & halogen free 1066/1333 4 now m393b1k70ch0-c(f8/h9/k0*)(04/05) 2gb (512m x4) * 36 lead free & halogen free 1066/1333 2 now 16gb 1.5v 2gx72 m393b2k70cm0-cf8(04/05) 4gb ddp (1024m x4) * 36 lead free & halogen free 1066/1333 4 now 32gb 1.5v 4gx72 m393b4g70am0-cf8(04/05) 8gb ddp (2048m x4) * 36 lead free & halogen free 1066/1333 4 now 1gb 1.35v 128mx72 m393b2873fh0-y(f8/h9/k0*)(04/05) 1gb (128m x8) * 9 lead free & halogen free 1066/1333 1 now 2gb 1.35v 256mx72 m393b5673fh0-y(f8/h9/k0*)(04/05) 1gb (128m x8) * 18 lead free & halogen free 1066/1333 2 now m393b5670fh0-y(f8/h9/k0*)(04/05) 1gb (256m x4) * 18 lead free & halogen free 1066/1333 1 now 4gb 1.35v 512mx72 m393b5173fh0-yf8(04/05) 1gb (128m x8) * 36 lead free & halogen free 1066/1333 4 now m393b5170fh0-y(f8/h9/k0*)(04/05) 1gb (256m x4) * 36 lead free & halogen free 1066/1333 2 now m393b5273ch0-y(f8/h9/k0*)(04/05) 2gb (256m x8) * 18 lead free & halogen free 1066/1333 2 now m393b5270ch0-y(f8/h9/k0*)(04/05) 2gb (512m x4) * 18 lead free & halogen free 1066/1333 1 now 8gb 1.35v 1gx72 m393b1k73ch0-yf8(04/05) 2gb (256m x8) * 36 lead free & halogen free 1066/1333 4 now m393b1k70ch0-y(f8/h9/k0*)(04/05) 2gb (512m x4) * 36 lead free & halogen free 1066/1333 2 now 16gb 1.35v 2gx72 m393b2k70cm0-yf8(04/05) 4gb ddp (1024m x4) * 36 lead free & halogen free 1066/1333 4 now 32gb 1.35v 4gx72 m393b4g70am0-yf8(04/05) 8gb ddp (2048m x4) * 36 lead free & halogen free 1066/1333 4 now notes: f7 = ddr3-800 (6-6-6) f8 = ddr3-1066 (7-7-7) h9 = ddr3-1333 (9-9-9) k0 = ddr3-1600 (11-11-11) 04 = idt b0 register 05 = inphi c0 register * k0 (1600mbps) available in es only www.samsung.com/semi/dram ff56d f57w
5 2h 2010 ddr3 sdr am vlp re gis tered modules density voltage organization part number composition compliance speed (mbps) ranks production 1gb 1.5v 128mx72 m392b2873fh0-c(f8/h9)(04/05) 1gb (128m x8) * 9 lead free & halogen free 1066/1333 1 now 2gb 1.5v 256mx72 m392b5673fh0-c(f8/h9)(04/05) 1gb (128m x8) * 18 lead free & halogen free 1066/1333 2 now m392b5670fh0-c(f8/h9)(04/05) 1gb (256m x8) * 18 lead free & halogen free 1066/1333 1 now 4gb 1.5v 512mx72 m392b5170fm0-c(f8/h9)(04/05) 2gb ddp (512m x4) * 18 lead free & halogen free 1066/1333 2 now m392b5273ch0-c(f8/h9)(04/05) 2gb (256m x8) * 18 lead free & halogen free 1066/1333 2 now m392b5270ch0-c(f8/h9)(04/05) 2gb (512m x4) * 18 lead free & halogen free 1066/1333 1 now 8gb 1.5v 1gx72 m392b1k73cm0-cf8(04/05) 4gb ddp (512m x8) * 18 lead free & halogen free 1066/1333 4 now m392b1k70cm0-c(f8/h9)(04/05) 4gb ddp (1024m x4) * 18 lead free & halogen free 1066/1333 2 now 16gb 1.5v 2gx72 m392b2g70am0-c(f8/h9)(04/05) 8gb ddp (2048m x4) * 18 lead free & halogen free 1066/1333 2 now 1gb 1.35v 128mx72 m392b2873fh0-y(f8/h9)(04/05) 1gb (128m x8) * 9 lead free & halogen free 1066/1333 1 now 2gb 1.35v 256mx72 m392b5673fh0-y(f8/h9)(04/05) 1gb (128m x8) * 18 lead free & halogen free 1066/1333 2 now m392b5670fh0-y(f8/h9)(04/05) 1gb (256m x8) * 18 lead free & halogen free 1066/1333 1 now 4gb 1.35v 512mx72 m392b5170fm0-y(f8/h9)(04/05) 2gb ddp (512m x4) * 18 lead free & halogen free 1066/1333 2 now m392b5273ch0-y(f8/h9)(04/05) 2gb (256m x8) * 18 lead free & halogen free 1066/1333 2 now m392b5270ch0-y(f8/h9)(04/05) 2gb (512m x4) * 18 lead free & halogen free 1066/1333 1 now 8gb 1.35v 1gx72 m392b1k73cm0-yf8(04/05) 4gb ddp (512m x8) * 18 lead free & halogen free 1066/1333 4 now m392b1k70cm0-y(f8/h9)(04/05) 4gb ddp (1024m x4) * 18 lead free & halogen free 1066/1333 2 now 16gb 1.35v 2gx72 m392b2g70am0-y(f8/h9)(04/05) 8gb ddp (2048m x4) * 18 lead free & halogen free 1066/1333 2 now notes: f7 = ddr3-800 (6-6-6) f8 = ddr3-1066 (7-7-7) h9 = ddr3-1333 (9-9-9) 04 = idt b0 register 05 = inphi c0 register ddr3 sdr am unbuffered modules density voltage organization part number composition compliance speed (mbps) ranks production 1gb 1.5v 128mx64 m378b2873fh0-c(f8/h9/k0*) 1gb (128m x8) * 8 lead free & halogen free 1066/1333/1600 1 now 2gb 1.5v 256mx64 m378b5673fh0-c(f8/h9/k0*) 1gb (128m x8) * 16 lead free & halogen free 1066/1333/1600 2 now m378b5773fh0-c(f8/h9/k0*) 2gb (256m x8) * 8 lead free & halogen free 1066/1333/1600 1 now 4gb 1.5v 512mx64 m378b5273ch0-c(f8/h9/k0*) 2gb (256m x8) * 16 lead free & halogen free 1066/1333/1600 2 now 8gb 1.5v 1024mx64 m378b1g73ah0-c(f8/h9/k0*) 4gb (512m x8) * 16 lead free & halogen free 1066/1333/1600 2 now www.samsung.com/semi/dram ff56d f57w 9 l d m ddr3 sdr am unbuffered modules ( ecc) density voltage organization part number composition compliance speed (mbps) ranks production 1gb 1.5v 128mx72 m391b2873fh0-c(f8/h9/k0*) 1gb (128m x8) * 9 lead free & halogen free 1066/1333/1600 1 now 2gb 1.5v 256mx72 m391b5673fh0-c(f8/h9/k0*) 1gb (128m x8) * 18 lead free & halogen free 1066/1333/1600 2 now m391b5773fh0-c(f8/h9/k0*) 2gb (256m x8) * 9 lead free & halogen free 1066/1333/1600 1 now 4gb 1.5v 512mx72 m391b5273ch0-c(f8/h9/k0*) 2gb (256m x8) * 18 lead free & halogen free 1066/1333/1600 2 now 8gb 1.5v 1024mx72 m391b1g73ah0-c(f8/h9/k0*) 4gb (512m x8) * 18 lead free & halogen free 1066/1333/1600 2 now 1gb 1.35v 128mx72 m391b2873fh0-y(f8/h9/k0*) 1gb (128m x8) * 9 lead free & halogen free 1066/1333/1600 1 now 2gb 1.35v 256mx72 m391b5673fh0-y(f8/h9/k0*) 1gb (128m x8) * 18 lead free & halogen free 1066/1333/1600 2 now m391b5773fh0-y(f8/h9/k0*) 2gb (256m x8) * 9 lead free & halogen free 1066/1333/1600 1 now 4gb 1.35v 512mx72 m391b5273ch0-y(f8/h9/k0*) 2gb (256m x8) * 18 lead free & halogen free 1066/1333/1600 2 now 8gb 1.35v 1024mx72 m391b1g73ah0-y(f8/h9/k0*) 4gb (512m x8) * 18 lead free & halogen free 1066/1333/1600 2 now notes: f7 = ddr3-800 (6-6-6) f8 = ddr3-1066 (7-7-7) h9 = ddr3-1333 (9-9-9) k0 = ddr3-1600 (11-11-11) * k0 (1600mbps) available in es only
6 2h 2010 www.samsung.com/semi/dram ddr3 & ddr2 sdram ddr2 sdr am re gis tered modules density organization part number composition compliance speed (mbps) register rank production 1gb 128mx72 m393t2863fba-c(e6/f7) (128m x8)*9 lead free 667/800 y 1 now 2gb 256mx72 m393t5660fba-c(e6/f7) (256m x4)*18 lead free 667/800 y 1 now m393t5663fba-c(e6/e7) (128m x8)*18 lead free 667/800 y 2 now 4gb 512mx72 m393t5160fba-c(e6/f7) (256m x4)*36 lead free 667/800 y 2 now 1gb.5v .cxf6mfl900m-773mfcc8msm6qxl( 28xf6mfc400m-773mfh00msm6qxc( .8xf6mfc400m-773mfh00msm6qxl( ity&paemxm/jhi ddr2 sdr am vlp re gis tered modules density organization part number composition compliance speed (mbps) register rank production 2gb 256mx72 m392t5660fba-ce6 (256m x4)*18 lead free 667 y 1 ddr3 sdr am comp onent s density voltage organization part number # pins-package compliance speed (mbps) dimensions production 1gb 1.5v 256m x4 k4b1g0446f-hc(f8/h9) 78 ball -fbga lead free & halogen free 1066/1333 7.5x11mm now 128m x8 k4b1g0846f-hc(f8/h9/k0*) 78 ball -fbga lead free & halogen free 1066/1333/1600 7.5x11mm now 2gb 1.5v 512m x4 k4b2g0446c-hc(f8/h9) 78 ball -fbga lead free & halogen free 1066/1333 7.5x11mm now 256m x8 k4b2g0846c-hc(f8/h9/k0*) 78 ball -fbga lead free & halogen free 1066/1333/1600 7.5x11mm now 128m x16 k4b2g1646c-hc(f8/h9/k0*/ma*/nb*) 96 ball -fbga lead free & halogen free 1066/1333/1600 7.5x13.3mm now 1gb 1.35v 256m x4 k4b1g0446f-hc(f8/h9) 78 ball -fbga lead free & halogen free 1066/1333 7.5x11mm now 128m x8 k4b1g0846f-hc(f8/h9/k0*) 78 ball -fbga lead free & halogen free 1066/1333/1600 7.5x11mm now 2gb 1.35v 512m x4 k4b2g0446c-hc(f8/h9) 78 ball -fbga lead free & halogen free 1066/1333 7.5x11mm now 256m x8 k4b2g0846c-hc(f8/h9/k0*) 78 ball -fbga lead free & halogen free 1066/1333/1600 7.5x11mm now 1gb.5v 28mxm7739fh00m-cfcfc( 2hmxm7739f/0ccm-8f8f8( k*mxm7739f/999m-*f*f*( )0mxm7739f/c00m-//f//f//( womxm7739f/hccm-/9f/9f/9( 1 mxm7739fm/99m-/4f/4f/4( nm)0imwoimpotm1 mplempapdypdyemdom .5mtoye ddr3 sdr am s odi mm modules density voltage organization part number composition compliance speed (mbps) ranks production 1gb 1.5v 128mx64 m471b2873fhs-c(f8/h9/k0*) 1gb (128m x8) * 8 lead free & halogen free 1066/1333/1600 1 now 2gb 1.5v 256mx64 m471b5673fh0-c(f8/h9/k0*) 1gb (128m x8) * 16 lead free & halogen free 1066/1333/1600 2 now m471b5773fhs-c(f8/h9/k0*) 2gb (256m x8) * 8 lead free & halogen free 1066/1333/1600 1 now 4gb 1.5v 512mx64 m471b5273ch0-c(f8/h9/k0*) 2gb (256m x8) * 16 lead free & halogen free 1066/1333/1600 2 now 8gb 1.5v 1024mx64 m471b1g73ah0-c(f8/h9/k0*) 4gb (512m x8) * 16 lead free & halogen free 1066/1333/1600 2 now 1gb 1.35v 128mx64 m471b2873fhs-y(f8/h9/k0*) 1gb (128m x8) * 8 lead free & halogen free 1066/1333/1600 1 now 2gb 1.35v 256mx64 m471b5673fh0-y(f8/h9/k0*) 1gb (128m x8) * 16 lead free & halogen free 1066/1333/1600 2 now m471b5773fhs-y(f8/h9/k0*) 2gb (256m x8) * 8 lead free & halogen free 1066/1333/1600 1 now 4gb 1.35v 512mx64 m471b5273ch0-y(f8/h9/k0*) 2gb (256m x8) * 16 lead free & halogen free 1066/1333/1600 2 now 8gb 1.35v 1024mx64 m471b1g73ah0-y(f8/h9/k0*) 4gb (512m x8) * 16 lead free & halogen free 1066/1333/1600 2 now 1gb.5v 28mxm7739fh00m-cfcfc( 2hmxm7739f/0ccm-8f8f8( k*mxm7739f/999m-*f*f*( )0mxm7739f/c00m-//f//f//( nm)0m-/c00wdgr(mpapdypdyemdom .5mtoye
7 2h 2010 www.samsung.com/semi/dram ddr2 sdram d r a m ddr2 sdr am f ull y buffered modules density organization part number composition compliance speed (mbps) voltage rank production yen yi/olay ogoili//grnc n2/v udyvodlvpcdv (m)rd.kmm //a dsvt y qfb cen idyolay ogoilid/prnc n2/v uyi/odlcpcg/ (m)rd.kmm //a dsvt y qfb idyolay ogoilid/grnc n2/v udyvodlvpcg/ (m)rd.kmm //a dsvt c qfb densit snolo./kr-oppo aagkrnnvoao/4l-u 6bdolosano4c 3lw#:)molom5z3o 6bdo3lw#:)molom5-3u ddr2 sdr am unbuffered modules density organization part number composition compliance speed (mbps) rank production den dyvol/c ogavlyv/grna nu2/mram2ap udyvodlvpcv (m)rd.kmm //amvpp d qfb yen yi/ol/c ogavli//grng nu2/mram2ap udyvodlvpcd/ (m)rd.kmm //amvpp y qfb densit snl./kr-oppo aagkrnnvoao/4l-u svl./krncppo aagkrzppoao/4l-u yvl./krncppo aagkrzppoao/4lnu 3lw#:)molom5z3 ddr2 sdr am unbuffered modules ( ecc) density organization part number composition compliance speed (mbps) rank production den dyvolay ogodlyv/grng nu2/mrap udyvolvpco (m)rd.kmm //amvpp d qfb yen yi/ol/c ogodli//grng nu2/mrap udyvolvpcdv (m)rd.kmm //amvpp y qfb densit snl./kr-oppo aagkrnnvoao/4l-u svl./krncppo aagkrzppoao/4l-u yvl./krncppo aagkrzppoao/4lnu 3lw#:)molom5z3 ddr2 sdr am s odi mm modules density organization part number composition compliance speed (mbps) rank production den dyvol/c ocaplyv/grng nu2/mram2ap u/cold/pcv (m)rd.kmm //amvpp y qfb yen yi/ol/c ocapli//grng nu2/mram2ap udyvodlvpcv (m)rd.kmm //amvpp y qfb densit snl./kr-oppo aagkrnnvoao/4l-u svl./krncppo aagkrzppoao/4l-u yvl./krncppo aagkrzppoao/4lnu 3lw#:)molom5z3 ddr2 sdr am comp onent s density organization part number # pins-package dimensions package speed (mbps) production yi/os d/old/ bcli/d/g4q znu2/mram2amrvp vc rne1 asildysikk (m)rd.kmmd#dz)-fhmtd.kmmd //amvppmdp// qfb idyos dyvodlc bclidpcg43 znu2/mram2ap /p rne1 asilosikk (m)rd.kmmd#dz)-fhmtd.kmmd //amvpp qfb /codlv bclidpvg43 znu2/mram2amrvp /p rne1 asilosikk (m)rd.kmmd#dz)-fhmtd.kmmd //amvppmdp// qfb gyodld/ bclidd/g43 znu2/mram2amrvp vc rne1 asildysikk (m)rd.kmmd#dz)-fhmtd.kmmd //amvppmdp// qfb dyvodlc bclidpcg45 znu2/mram2ap /p rne1 asilosikk (m)rd.kmmd#dz)-fhmtd.kmmd //amvpp 4g /codlv bclidpvg45 znu2/mram2amrvp /p rne1 asilosikk (m)rd.kmmd#dz)-fhmtd.kmmd //amvppmdp// 4g gyodld/ bclidd/g45 znu2/mram2amrvp vc rne1 asildysikk (m)rd.kmmd#dz)-fhmtd.kmmd //amvppmdp// 4g des yi/odlc bcldepcc4r nnu2/mram2ap /v rne1 asilosikk (m)rd.kmmd#dz)-fhmtd.kmmd //amvpp qfb dyvodlv bcldepvc4r nnu2/mram2amrvp /v rne1 asilosikk (m)rd.kmmd#dz)-fhmtd.kmmd //amvppmdp// qfb /codld/ bclded/c4r nnu2/mram2amrvp vc rne1 asildysikk (m)rd.kmmd#dz)-fhmtd.kmmd //amvppmdp// qfb densit snlaagkrnnvo -r-r-u yvlaagkrzppo nrnrnu svlaagkrzppo -r-r-u yzlaagkrmpnno vrvrvu 3lw#:)molom5z3
8 2h 2010 www.samsung.com/semi/dram ddr ddr sdr am comp onent s density organization part number # pins - package speed (mbps) 256mb 64mx4 k4h560438n-lcb3/b0 66-tsop 266/333 32mx8 k4h560838n-lccc/b3 66-tsop 333/400 16mx16 k4h561638n-lccc/b3 66-tsop 333/400 512mb 128mx4 k4h510438g-lcb3/b0 66-tsop 266/333 k4h510438g-hccc/b3 60-fbga 333/400 64mx8 k4h510838g-lccc/b3 66-tsop 333/400 k4h510838g-hccc/b3 60-fbga 333/400 32mx16 k4h511638g-lccc/b3 66-tsop 333/400 128mb 8mx16 k4h281638o-lccc 66-tsop 400 1gb.5v 0mxm773mccm-/99wkhmsm6qxmjl( ommxm773mccm-/99wkhmsm6yxm( 9mxm773999m-/ccwkhmsm6qxmjl( 66mxm773400m-m00wkhmsm6qx9( ddr sdr am 1u re gis tered modules density organization part number composition speed (mbps) 1gb 128mx72 m312l2920gh3-cb3 (128mx4)*18 333/400 2gb 256mx72 m312l5720gh3-cb3 (128mx4)*36 333/400 1gb.5v 0mxm773mccm-/99wkhmsm6qxmjl( ommxm773mccm-/99wkhmsm6yxm( 9mxm773999m-/ccwkhmsm6qxmjl( 66mxm773400m-m00wkhmsm6qx9( b egevm/h4fgdo ddr dr am s odi mm modules density organization part number composition speed (mbps) 512mb 64mx64 m470l6524gl0-cb300 (32m x 16)*8 333 1gb.5v 0mxm773mccm-/99wkhmsm6qxmjl(m 66mxm773400m-m00wkhmsm6qx9( 9mxm773999m-/ccwkhmsm6qxmjl( ommxm773mccm-/99wkhmsm6yxm(
9 2h 2010 www.samsung.com/semi/dram sdram, rdram & graphics dram components d r a m sdr am comp onent s density organization part number # pins - package speed (mbps) refresh remarks /cos volv bca/cpvgyq (naippp ic la6: dgg cb 26(dbi7,dtfdkm8-)vmkmt7 cold/ bca/cd/gyq (nu(puaim/ppppp ic la6: dggmd// cb 26(dbi7,dtfdkm8-)vmkmt7 dyvos d/olv bcayvpvgy6 (nu(paippp ic la6: dgg cb vold/ bcayvd/gy6 (nu(puaim/ppppp ic la6: dggmd// cb yi/os /colc bcai/pcgyq (nu(paippp ic la6: dgg vb gyolv bcai/pvgyq (nu(paippp ic la6: dgg vb d/old/ bcai/d/gyq (nu(puaim/ppppp ic la6: dggmd// vb idyos dyvolc bcaidpcgyh 9nu(puaipppp ic la6: dgg vb 26(dbi7,dtfdkm8-)vmkmt7 /colv bcaidpvgyh 9nu(puaipppp ic la6: dgg vb 26(dbi7,dtfdkm8-)vmkmt7 gyold/ bcaidd/gyh 9nu(puaipppp ic la6: dgg vb 26(dbi7,dtfdkm8-)vmkmt7 densit 4olo/l88m(vr:wo n m8h5io4l9o.l9m( yl(osf7gk#(r:wo n m8hm(:#g(miovtmv0o9r#to iisob:(0m#rf)o d:f0ktoc 6wwoh(l7gv#ko:(mo4m:7oy(mm 3lw#:)mtoo5o3 i hmm7to./mooo moobb,o/4lox./mppo/4ku rdr am comp onent s density organization part number speed (mbps) # pins-package refresh note yvvo ldv bcgvvdv/o3 hnloppp dp// oy rne1 d/bmgyk0 26(ditd1xhfdp densit 6wwoh(l7gv#ko:(mowm:7of(mm gr aph ic s dr am comp onent s type density organization part number package vdd/vddq speed bin (mhz) status ehhgi des gyolgy bcedpgyir2 znudpdd dap rne1 dsimdsit dvppmypppmyipp ehhgg des gyolgy bc5dpgycb2 znudpdd dg/ rne1 dsvtmdsvt appmvppmdpppmdypp idyos d/olgy bc5iygyc4z znudpdd dg/ rne1 dsvmdsvt appmvpp 26(do)kdfdp bc5iygyc4z z5udpdd dg/ rne1 dsomdsot dppp 26(do)kdfdp bc5iygyc4z z5udpdd dg/ rne1 yspimyspit dypp 26(do)kdfdp ehhgy des /cold/ bcqded/c42 znudpdd vc rne1dd dsvmdsvt cppmipp 26(do)kdfdp idyos gyold/ bcqidd/g4e znudpdd vc rne1dd dsvmdsvt cppmipp 26(do)kdfdp ehhgd dyvos colgy bchy/gygvb tnudpdd dcc rne1dd ysimysit yppmyip nxak8-d6v7dfpo bchy/gygvb 9nudpdd dpp l4r:dd ysimysit yppmyip vold/ bchy/d/gvb (nudpd // la6:33dd ysimysit yppmyip 26(dam8dfdp densit package: xto nxy.o &to n xy.o 4m:7oy(mmu wtozcxmccoydw6 3tomccoydw6o 4m:7oy(mmu =tozcoydw6o 4m:7oy(mmu n to nie. 4to nie .o 4m:7oy(mmu 6tomonoydw6 dtomonoydw6o 4m:7oy(mmu btoydw6o b:wl)mfoy(mmo~o4m:7oy(mmu s tomppoydw6o b:wl)mfoy(mmo~o4m:7oy(mmuo (1) speeds (clock cycle - speed bin): pctop5cfko k-ppbb,u p-top5-fko kpppbb,u -/top5---o mzppbb,u pvtop5vmfko mcppbb,u pztop5zofko mkppbb,u pctop5cpfko mmppbb,uo m6tomfko mpppbb,u mmtom5mfko cppbb,u mktom5k-fko zppbb,u mctom5ckcfko vppbb,u mntom5nnvfko nppbb,u kptok5pfko -ppbb,uo kktok5kfko c-pbb,u k-tok5-fko cppbb,u k6tok5znfko o-pbb,u ootoo5ofko oppbb,u cptoc5pfko kcpbb,u -pto-5pfko kppbb,u
10 2h 2010 www.samsung.com/semi/dram mobile sdr/ddr & lpddr2 mobile-sdr/ddr density type organization part number package power production 256mb msdr 16mx16 k4m56163pn-bg(1) 54-fbga 1.8v now 8mx32 k4m56323pn-hg(1) 90-fbga 1.8v now mddr 16mx16 k4x56163pn-fg(1) 60-fbga 1.8v now 8mx32 k4x56323pn-8g(1) 90-fbga 1.8v now 512mb msdr 32mx16 k4m51163pi-bg(1) 54-fbga 1.8v now 16mx32 k4m51323pi-hg(1) 90-fbga 1.8v now mddr 32mx16 k4x51163pi-fg(1) 60-fbga 1.8v now 16mx32 k4x51323pi-8g(1) 90-fbga 1.8v now 1gb mddr 64mx16 k4x1g163pe-fg(1) 60-fbga 1.8v now 32mx32 k4x1g323pe-8g(1) 90-fbga 1.8v now 64mx16 k4x1g163pf-fg(1) 60-fbga 1.8v mp q1'11 32mx32 k4x1g323pf-8g(1) 90-fbga 1.8v mp q1'11 2gb mddr 128mx16 k4x2g163pc-fg(1) 60-fbga 1.8v now 64mx32 k4x2g323pc-8g(1) 90-fbga 1.8v now 4gb mddr x32 (2cs, 2cke) k4x4g303pb-ag(1) 168-fbga, 12x12 pop, ddp 1.8v now x32 (2cs, 2cke) k4x4g303pb-ag(1) 168-fbga, 12x12 pop, ddp 1.8v now x32 (2cs, 2cke) k4x4g303pb-7g(1) 240-fbga, 14x14 pop, ddp 1.8v now lpddr2 density type organization part number package power production 512mb lpddr2 1ch x32 k4p51323ei-ag(1) 168-fbga, 12x12 pop 1.8v now 1gb lpddr2 1ch x32 k4p1g324ee-ag(1) 168-fbga, 12x12 pop 1.2v now 2gb lpddr2 1ch x32 k4p2g324ec-ag(1) 168-fbga, 12x12 pop 1.2v now 2ch x32/ch k3pe3e300m-xg(1) 216-fbga, 12x12 pop 1.2v now k3pe3e300a-xg(1) 240-fbga, 14x14 pop 1.2v now 4gb lpddr2 1ch x32 k4p4g304ec-ag(1) 168-fbga, 12x12 pop, ddp 1.2v now 2ch x32/ch k3pe4e400m-xg(1) 216-fbga, 12x12 pop, ddp 1.2v now k3pe4e400m-xg(1) 216-fbga, 12x12 pop, ddp 1.2v now k3pe4e400a-xg(1) 240-fbga, 14x14 pop, ddp 1.2v now 1gb.5v oyymglttrc&rmt''eletmp&m . k&eotetimqtuimdfb65 3mzmfo53mzm75m-b epgimftuel( (1) speed: mobile-sdr oonptomnnbb,io/4o o oov-tomoobb,io/4o mobile-ddr ooaztokppbb,io/4o o oo/ntomnnbb,io/4o lpddr2 oo/ptonnvbhhk o oo/mtozppbhhk
11 2h 2010 www.samsung.com/semi/dram dram ordering information d r a m 1. memory (k) 2. dram: 4 3. dram type b: ddr3 sdram d: gddr sdram g: gddr5 sdram h: ddr sdram j: gddr3 sdram m: mobile sdram n: sddr2 sdram s: sdram t: ddr sdram u: gddr4 sdram v: mobile ddr sdram power efficient address w: sddr3 sdram x: mobile ddr sdram y: xdr dram z: value added dram 4. density 10: 1g, 8k/32ms 16: 16m, 4k/64ms 26: 128m, 4k/32ms 28: 128m, 4k/64ms 32: 32m, 2k/32ms 50: 512m, 32k/16ms 51: 512m, 8k/64ms 52: 512m, 8k/32ms 54: 256m, 16k/16ms 55: 256m, 4k/32ms 56: 256m, 8k/64ms 62: 64m, 2k/16ms 64: 64m, 4k/64ms 68: 768m, 8k/64ms 1g: 1g, 8k/64ms 2g: 2g, 8k/64ms 4g: 4g, 8k/64ms 5. bit organization 02: x2 04: x4 06: x4 stack (flexframe) 07: x8 stack (flexframe) 08: x8 15: x16 (2cs) 16: x16 26: x4 stack (jedec standard) 27: x8 stack (jedec standard) 30: x32 (2cs, 2cke) 31: x32 (2cs) 32: x32 6. # of internal banks 2: 2 banks 3: 4 banks 4: 8 banks 5: 16 banks 7. interface ( vdd, vddq) 2: lvttl, 3.3v, 3.3v 4: lvttl, 2.5v, 2.5v 5: sstl-2 1.8v, 1.8v 6: sstl-15 1.5v, 1.5v 8: sstl-2, 2.5v, 2.5v a: sstl, 2.5v, 1.8v f: pod-15 (1.5v,1.5v) h: sstl_2 dll, 3.3v, 2.5v m: lvttl, 1.8v, 1.5v n: lvttl, 1.5v, 1.5v p: lvttl, 1.8v, 1.8v q: sstl-2 1.8v, 1.8v r: sstl-2, 2.8v, 2.8v u: drsl, 1.8v, 1.2v 8. revision a: 2nd generation b: 3rd generation c: 4th generation d: 5th generation e: 6th generation f: 7th generation g: 8th generation h: 9th generation i: 10th generation j: 11th generation k: 12th generation m: 1st generation n: 14th generation q: 17th generation 9. package type ddr sdram l: tsop ii (lead-free & halogen-free) h: fbga (lead-free & halogen-free) f: fbga for 64mb ddr (lead-free & halogen-free) 6: stsop ii (lead-free & halogen-free) t: tsop ii n: stsop ii g: fbga u: tsop ii (lead-free) v: stsop ii (lead-free) z: fbga (lead-free) ddr2 sdram z: fbga (lead-free) j: fbga ddp (lead-free) q: fbga qdp (lead-free) h: fbga (lead-free & halogen-free) m: fbga ddp (lead-free & halogen-free) e: fbga qdp (lead-free & halogen-free) t: fbga dsp (lead-free & halogen-free, thin) ddr3 sdram z: fbga (lead-free) h: fbga (halogen-free & lead-free) graphics memory q: tqfp u: tqfp (lead free) g: 84/144 fbga v: 144 fbga (lead free) z: 84 fbga(lead free) t: tsop l: tsop (lead free) a: 136 fbga b: 136 fbga(lead free) h: fbga(hologen free & lead free) e: 100 fbga(hologen free & lead free) sdram l tsop ii (lead-free & halogen-free) n: stsop ii t: tsop ii u: tsop ii (lead-free) v: stsop ii (lead-free) vbg1 b9x928.g og8bg.xg39f839n bggo 23b9 1 2 3 4 5 6 7 8 9 10 11 k 4 t xx xx x x x x x xx samsung memory dram dram type density bit organization speed temp & power package type revision interface (vdd, vddq) number of internal banks
12 2h 2010 www.samsung.com/semi/dram dram ordering information xdr dram j: boc(lf) p: boc mobile dram leaded / lead free g/a: 52balls fbga mono r/b: 54balls fbga mono x /z: 54balls boc mono j /v: 60(72)balls fbga mono 0.5pitch l /f: 60balls fbga mono 0.8pitch s/d: 90balls fbga monolithic (11mm x 13mm) f/h: smaller 90balls fbga mono y/p: 54balls csp ddp m/e: 90balls fbga ddp 10. temp & power - common (temp, power) c: commercial, normal (0c C 95c) & normal power c: (mobile only) commercial (-25 ~ 70c), normal power j: commercial, medium l: commercial, low (0c C 95c) & low power l: (mobile only) commercial, low, i-tcsr f: commercial, low, i-tcsr & pasr & ds e: extended (-25~85c), normal n: extended, low, i-tcsr g: extended, low, i-tcsr & pasr & ds i: industrial, normal (-40c C 85c) & normal power p: industrial, low (-40c C 85c) & low power h: industrial, low, i-tcsr & pasr & ds 11. speed (wafer/chip biz/bgd: 00) ddr sdram cc: ddr400 (200mhz @ cl=3, trcd=3, trp=3) b3: ddr333 (166mhz @ cl=2.5, trcd=3, trp=3) *1 a2: ddr266 (133mhz @ cl=2 , trcd=3, trp=3) b0: ddr266 (133mhz @ cl=2.5, trcd=3, trp=3) note 1: "b3" has compatibility with "a2" and "b0" ddr2 sdram cc: ddr2-400 (200mhz @ cl=3, trcd=3, trp=3) d5: ddr2-533 (266mhz @ cl=4, trcd=4, trp=4) e6: ddr2-667 (333mhz @ cl=5, trcd=5, trp=5) f7: ddr2-800 (400mhz @ cl=6, trcd=6, trp=6) e7: ddr2-800 (400mhz @ cl=5, trcd=5, trp=5) ddr3 sdram f7: ddr3-800 (400mhz @ cl=6, trcd=6, trp=6) f8: ddr3-1066 (533mhz @ cl=7, trcd=7, trp=7) g8: ddr3-1066 (533mhz @ cl=8, trcd=8, trp=8) h9: ddr3-1333 (667mhz @ cl=9, trcd=9, trp=9) k0: ddr3-1600 (800mhz @ cl=11, trcd=11, trp=11) graphics memory 18: 1.8ns (550mhz) 04: 0.4ns (2500mhz) 20: 2.0ns (500mhz) 05: 0.5ns (2000mhz) 22: 2.2ns (450mhz) 5c: 0.56ns (1800mhz) 25: 2.5ns (400mhz) 06: 0.62ns (1600mhz) 2c: 2.66ns (375mhz) 6a: 0.66ns (1500mhz) 2a: 2.86ns (350mhz) 07: 0.71ns (1400mhz) 33: 3.3ns (300mhz) 7a: 0.77ns (1300mhz) 36: 3.6ns (275mhz) 08: 0.8ns (1200mhz) 40: 4.0ns (250mhz) 09: 0.9ns (1100mhz) 45: 4.5ns (222mhz) 1 : 1.0ns (1000mhz) 50/5a: 5.0ns (200mhz) 1 : 1.1ns (900mhz) 55: 5.5ns (183mhz) 12: 1.25ns (800mhz) 60: 6.0ns (166mhz) 14: 1.4ns (700mhz) 16: 1.6ns (600mhz) sdram (default cl=3) 50: 5.0ns (200mhz cl=3) 60: 6.0ns (166mhz cl=3) 67: 6.7ns 75: 7.5ns pc133 (133mhz cl=3) xdr dram a2: 2.4gbps, 36ns, 16cycles b3: 3.2gbps, 35ns, 20cycles c3: 3.2gbps, 35ns, 24cycles c4: 4.0gbps, 28ns, 24cycles ds: daisychain sample mobile-sdram 60: 166mhz, cl 3 75: 133mhz, cl 3 80: 125mhz, cl 3 1h: 105mhz, cl 2 1l: 105mhz, cl 3 15: 66mhz, cl 2 & 3 mobile-ddr c3: 133mhz, cl 3 c2: 100mhz, cl 3 c0: 66mhz, cl 3 note: all of lead-free or halogen-free product are in compliance with rohs :tpn t3=3f7eo np7toe=or3-7r3h topn frt3 1 2 3 4 5 6 7 8 9 10 11 k 4 t xx xx x x x x x xx samsung memory dram dram type density bit organization speed temp & power package type revision interface (vdd, vddq) number of internal banks
13 2h 2010 dram ordering information www.samsung.com/semi/dram 1. memory module: m 2. dimm type 3: dimm 4: sodimm 3. data bits 12: x72 184pin low profile registered dimm 63: x63 pc100 / pc133 sodimm with spd for 144pin 64: x64 pc100 / pc133 sodimm with spd for 144pin (intel/jedec) 66: x64 unbuffered dimm with spd for 144pin/168pin (intel/jedec) 68: x64 184pin unbuffered dimm 70: x64 200pin unbuffered sodimm 71: x64 204pin unbuffered sodimm 74: x72 /ecc unbuffered dimm with spd for 168pin (intel/jedec) 77: x72 /ecc pll + register dimm with spd for 168pin (intel pc100) 78: x64 240pin unbuffered dimm 81: x72 184pin ecc unbuffered dimm 83: x72 184pin registered dimm 90: x72 /ecc pll + register dimm 91: x72 240pin ecc unbuffered dimm 92: x72 240pin vlp registered dimm 93: x72 240pin registered dimm 95: x72 240pin fully buffered dimm with spd for 168pin (jedec pc133) 4. dram component type b: ddr3 sdram (1.5v vdd) l: ddr sdram (2.5v vdd) s: sdram t: ddr2 sdram (1.8v vdd) 5. depth 09: 8m (for 128mb/512mb) 17: 16m (for 128mb/512mb) 16: 16m 28: 128m 29: 128m (for 128mb/512mb) 32: 32m 33: 32m (for 128mb/512mb) 51: 512m 52: 512m (for 512mb/2gb) 56: 256m 57: 256m (for 512mb/2gb) 59: 256m (for 128mb/512mb) 64: 64m 65: 64m (for 128mb/512mb) 1g: 1g 1k: 1g (for 2gb) 6. # of banks in comp. & interface 1: 4k/64mxref., 4banks & sstl-2 2 : 8k/ 64ms ref., 4banks & sstl-2 2: 4k/ 64ms ref., 4banks & lvttl (sdr only) 5: 8k/ 64ms ref., 4banks & lvttl (sdr only) 5: 4banks & sstl-1.8v 6: 8banks & sstl-1.8v 7. bit organization 0: x 4 3: x 8 4: x16 6: x 4 stack (jedec standard) 7: x 8 stack (jedec standard) 8: x 4 stack 9: x 8 stack 8. component revision a: 2nd gen. b: 3rd gen. c: 4th gen. d: 5th gen. e: 6th gen. f: 7th gen. g: 8th gen. m: 1st gen. q: 17th gen. 9. package e: fbga qdp (lead-free & halogen-free) g: fbga h: fbga (lead-free & halogen-free) j: fbga ddp (lead-free) m: fbga ddp (lead-free & halogen-free) n: stsop q: fbga qdp (lead-free) t: tsop ii (400mil) u: tsop ii (lead-free) v: stsop ii (lead-free) z: fbga(lead-free) 10. pcb revision 0: mother pcb 1: 1st rev 2: 2nd rev. 3: 3rd rev. 4: 4th rev. a: parity dimm s: reduced pcb u: low profile dimm 11. temp & power c: commercial temp. (0c ~ 95c) & normal power l: commercial temp. (0c ~ 95c) & low power 12. speed cc: (200mhz @ cl=3, trcd=3, trp=3) d5: (266mhz @ cl=4, trcd=4, trp=4) e6: (333mhz @ cl=5, trcd=5, trp=5) f7: (400mhz @ cl=6, trcd=6, trp=6) e7: (400mhz @ cl=5, trcd=5, trp=5) f8: (533mhz @ cl=7, trcd=7, trp=7) g8: (533mhz @ cl=8, trcd=8, trp=8) h9: (667mhz @ cl=9, trcd=9, trp=9) k0: (800mhz @ cl=10, trcd=10, trp=10) 7a: (133mhz cl=3/pc100 cl2) 13. amb vendor for fbdimm 0, 5: intel 1, 6, 8: idt 9: montage note: all of lead-free or halogen-free product are in compliance with rohs ptesd=7eo np7toe=or3-7r3h topn frt3 1 2 3 4 5 6 7 8 9 10 11 12 13 m x xx t xx x x x x x x xx x samsung memory dimm data bits dram component type depth number of banks bit organization amb vendor speed temp & power pcb revision package component revision 9 l d m
14 2h 2010 www.samsung.com/semi/fash slc flash s lc fl ash family density part number package type org. vol(v) moq status tray t/r -xxxx0xx -xxx0txx 16gb based 16gb mono k9fag08u0m-hcb0 bga x8 3.3 960 1000 e/s k9fag08s0m-hcb0 bga x8 1.8 960 1000 e/s 32gb ddp k9kbg08u1m-hcb0 bga x8 3.3 960 1000 e/s k9kbg08s1m-hcb0 bga x8 1.8 960 1000 e/s 64gb qdp k9wcg08u5m-hcb0 bga x8 3.3 960 1000 e/s k9wcg08s5m-hcb0 bga x8 1.8 960 1000 e/s 128gb odp k9qdg08u5m-hcb0 bga x8 3.3 960 1000 e/s k9qdg08s5m-hcb0 bga x8 1.8 960 1000 e/s 8gb based 64gb dsp k9ncg08u5m-pck0 tsop1 x8 3.3 960 1000 m/p 32gb qdp k9wbg08u1m-pcb0 tsop1 x8 3.3 960 1000 m/p k9wbg08u1m-pib0 tsop1 x8 3.3 960 1000 m/p 16gb ddp k9kag08u0m-pcb0 tsop1 x8 3.3 960 1000 m/p k9kag08u0m-pib0 tsop1 x8 3.3 960 1000 m/p 8gb mono k9f8g08u0m-pcb0 tsop1 x8 3.3 960 1000 m/p k9f8g08u0m-pib0 tsop1 x8 3.3 960 1000 m/p 4gb based 16gb qdp k9wag08u1d-scb0 tsop1 hf&lf x8 3.3 960 1000 c/s k9wag08u1d-sib0 tsop1 hf&lf x8 3.3 960 1000 c/s k9wag08u1b-pcb0 tsop1 x8 3.3 960 1000 m/p k9wag08u1b-pib0 tsop1 x8 3.3 960 1000 m/p k9wag08u1b-kib0 ulga hf & lf x8 3.3 960 2000 m/p 8gb ddp k9k8g08u0d-scb0 tsop1 hf&lf x8 3.3 960 1000 c/s k9k8g08u0d-sib0 tsop1 hf&lf x8 3.3 960 1000 c/s k9k8g08u0b-pcb0 tsop1 x8 3.3 960 1000 m/p k9k8g08u0b-pib0 tsop1 x8 3.3 960 1000 m/p k9k8g08u1b-kib0 ulga hf & lf x8 3.3 960 2000 m/p 4gb mono k9f4g08u0d-scb0 tsop1 hf & lf x8 3.3 960 1000 c/s k9f4g08u0d-sib0 tsop1 hf& lf x8 3.3 960 1000 c/s k9f4g08u0b-pcb0 tsop1 x8 3.3 960 1000 m/p k9f4g08u0b-pib0 tsop1 x8 3.3 960 1000 m/p k9f4g08u0b-kib0 ulga hf & lf x8 3.3 960 2000 m/p 2gb based 2gb mono k9f2g08u0c-scb0 tsop-lf/hf x8 3.3 960 1000 c/s k9f2g08u0c-sib0 tsop-lf/hf x8 3.3 960 1000 c/s k9f2g08u0b-pcb0 tsop1 x8 3.3 960 1000 m/p k9f2g08u0b-pib0 tsop1 x8 3.3 960 1000 m/p 1gb based 1gb mono k9f1g08u0d-scb0 tsop-lf/hf x8 3.3 960 1000 c/s k9f1g08u0d-sib0 tsop-lf/hf x8 3.3 960 1000 c/s k9f1g08u0c-pcb0 tsop1 x8 3.3 960 1000 m/p k9f1g08u0c-pib0 tsop1 x8 3.3 960 1000 m/p 512mb based 512mb mono k9f1208u0c-pcb0 tsop1 x8 3.3 960 1000 m/p k9f1208u0c-pib0 tsop1 x8 3.3 960 1000 m/p k9f1208r0c-jib0 63 fbga(8.5x13) x8 1.8 1120 - m/p k9f1208u0c-jib0 63 fbga(8.5x13) x8 3.3 1120 - m/p 256mb based 256mb mono k9f5608u0d-pcb0 tsop1 x8 3.3 960 1000 m/p k9f5608u0d-pib0 tsop1 x8 3.3 1000 1000 m/p k9f5608r0d-jib0 63 fbga(9x11) x8 1.8 1280 2000 m/p k9f5608u0d-jib0 63 fbga(9x11) x8 3.3 1280 2000 m/p fyepremcto&pc&metrlmytcpym5 pprroamrpyermleglereo&p&daem'tlmyp&er&mglttrc&mt''eldoarj 1t&evmmoyymgpl&rmplemyeptm'lee
15 2h 2010 www.samsung.com/semi/fash mlc flash, sd/microsd flash cards & ssd f l a s h sd and microsd fl ash c ards application density controller ahdn)kr yen nft7)v7dzfxkd-fv)-da)k0xthdkm8d.fkd))i-)si-i7zd)trdfkrmkithdit.fkk)7ift cen ven d/en oivkfahdn)kr yen nft7)v7dzfxkd-fv)-da)k0xthdkm8d.fkd))i-)si-i7zd)trdfkrmkithdit.fkk)7ift cen ven d/en gyen .wm:kmovlf#:v#o2lg(owlv:woi :8kgf)ok:wmko(mh(mkmf#:#r1mofl(ow:#mk#oh(l7gv#olffm(rf)k5 o dl#mtoo6wwoh:(#ko:(mowm:7of(mm solid st a te dri ves (ssd) interface size connector controller comp. capacity part number a1l1d33duq)7imp dysi l,itda1l1 o1x d/es /cen o~i:1p/czonh p1ppp dyven o~i:1dyvzonh p1ppp yi/en o~i:1yi/zohg p1ppp lohhgdnft7kf--mk gyesdlfhh-m ofrmdhhgdq1qh idyen nft7)v7da)-m0 da1l1d33duq)7imp ka1l1 ka1l1 o1x d/es gyen o~o:1pgyzonh ppppp /cen o~o:1p/czohg ppppp dyven o~o:1dyvzor9 ppppp .wm:kmovlf#:v#o2lg(owlv:woi :8kgf)ok:wmko(mh(mkmf#:#r1mofl(ow:#mk#oh(l7gv#olffm(rf)k5 o dl#mto6wwoh:(#ko:(mowm:7of(mm m lc fl ash type family density technology part number package type org. vol(v) moq comments tray t/r -xxxx0xx -xxx0txx ysi7 gyesdn)0mr gyesdoftf yatk bozhepv9d1 annp la6:d d(m)rd.kmmd#dz)-fhmtd.kmm lv gsg o/p dppp /cesdhh: yatk bo(nepv9p1 annp la6:d d(m)rd.kmmd#dz)-fhmtd.kmm lv gsg o/p dppp dyvesd4h: yatk boenepv9p1 annp la6:d d(m)rd.kmmd#dz)-fhmtd.kmm lv gsg o/p dppp d/esdn)0mr d/esdoftf gytk boe1epv9p2 annp la6:d d(m)rd.kmmd#dz)-fhmtd.kmm lv gsg o/p dppp gyesdhh: gytk bo(nepv9p2 annp la6:d d(m)rd.kmmd#dz)-fhmtd.kmm lv gsg o/p dppp /cesd4h: gytk boznepv9d2 annp la6:d d(m)rd.kmmd#dz)-fhmtd.kmm lv gsg o/p dppp vesdn)0mr vesdoftf gytk boevepv9pn annp la6:d d(m)rd.kmmd#dz)-fhmtd.kmm lv gsg o/p dppp gsi7 gyesdn)0mr gyesdkftf gytk bonhepv9i1 onnpppd (e1d d(m)rd.kmmd#dz)-fhmtd.kmm lv gsg vcp ofithd7fd yltkd4gfdp /cesdhh: gytk bonnepv9d1 onnpppd (e1d d(m)rd.kmmd#dz)-fhmtd.kmm lv gsg vcp ofithd7fd yltkd4gfdp dyvesd4h: gytk bo1nepv9p1 onnpppd (e1d d(m)rd.kmmd#dz)-fhmtd.kmm lv gsg vcp ofithd7fd yltkd4gfdp .wm:kmovlf#:v#o2lg(owlv:woi :8kgf)ok:wmko(mh(mkmf#:#r1mofl(ow:#mk#oh(l7gv#olffm(rf)k5 o dl#mto6wwoh:(#ko:(mowm:7of(mm
16 2h 2010 www.samsung.com/semi/fash flash ordering information 1. memory (k) 2. nand flash : 9 3. small classification (s lc : s ingle level cell, mlc : multi level cell) 7 : slc movinand 8 : mlc movinand f : slc normal g : mlc normal h : mlc qdp k : slc ddp l : mlc ddp m : mlc dsp n : slc dsp p : mlc 8 die stack q : slc 8 die stack s : slc single sm t : slc single (s/b) u : 2 stack msp w : slc 4 die stack 4~5. density 12 : 512m 56 : 256m 1g : 1g 2g : 2g 4g : 4g 8g : 8g ag : 16g bg : 32g cg : 64g dg : 128g eg : 256g lg : 24g ng : 96g zg : 48g 00 : none 6~7. organization 00 : none 08 : x8 16 : x16 8. vcc a : 1.65v~3.6v b : 2.7v (2.5v~2.9v) c : 5.0v (4.5v~5.5v) d : 2.65v (2.4v~2.9v) e : 2.3v~3.6v r : 1.8v (1.65v~1.95v) q : 1.8v (1.7v~1.95v) t : 2.4v~3.0v u : 2.7v~3.6v v : 3.3v (3.0v~3.6v) w : 2.7v~5.5v, 3.0v~5.5v 0 : none 9. mode 0 : normal 1 : dual nce & dual r/nb 3 : tri /ce & tri r/b 4 : quad nce & single r/nb 5 : quad nce & quad r/nb 9 : 1st block otp a : mask option 1 l : low grade 10. generation m : 1st generation a : 2nd generation b : 3rd generation c : 4th generation d : 5th generation 11. ---- 12. package a : cob b : fbga (halogen-free, lead-free) c : chip biz d : 63-tbga f : wsop (lead-free) g : fbga h : tbga (lead-free) i : ulga (lead-free) (12*17) j : fbga (lead-free) l : ulga (lead-free) (14*18) m : tlga n : tlga2 p : tsop1 (lead-free) q : tsop2 (lead-free) s : tsop1 (halogen-free, lead-free) t : tsop2 u : cob (mmc) v : wsop w : wafer y : tsop1 z : welp (lead-free) 13. temp c : commercial i : industrial 0 : none (containing wafer, chip, biz, exception handling code) 14. customer bad block b : include bad block d : daisychain sample l : 1~5 bad block n : ini. 0 blk, add. 10 blk s : all good block 0 : none (containing wafer, chip, biz, exception handling code) 15. pre-program version 0 : none serial (1~9, a~z) n7 om681gb.5v28 bg.xg39f839n bggo 23b9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 k 9 x x x x x x x x - x x x x samsung memory nand flash small classifcation density density organization organization vcc pre-program version customer bad block temp package --- generation mode
17 2h 2010 www.samsung.com/semi/fash ntram & late write rr sram s r a m ntr am type density organization part number package operating mode vdd (v) access time tcd (ns) speed tcyc (mhz) i/o voltage (v) production status q7g1o ayos yolg/ baq/cg/cio dpp l4r:&dd/irne1 a:n ysi ys/&dgsi yip&dd/a ysi o)00d:kfrxv7ift coldv baq/cdvcio dpp l4r:&dd/irne1 a:n ysi ys/&dgsi yip&dd/a ysi o)00d:kfrxv7ift g/os dolg/ baqgyg/gin dpp l4r:&dd/irne1 a:n gsg&dysi ys/&dgsi yip&dd/a gsg&dysi o)00d:kfrxv7ift yoldv baqgydvgin dpp l4r:&dd/irne1 a:n gsg&dysi ys/&dgsi yip&dd/a gsg&dysi o)00d:kfrxv7ift dolg/ baogyg/gin dpp l4r: rl gsg&dysi asi ddv gsg&dysi o)00d:kfrxv7ift yoldv baogydvgin dpp l4r: rl gsg&dysi asi ddv gsg&dysi o)00d:kfrxv7ift dvos doldv baqd/dvgdn dpp l4r:&dd/irne1 a:n gsg&dysi ys/&dgsi yip&dd/a gsg&dysi o)00d:kfrxv7ift idyblg/ baqd/g/gdn dpp l4r:&dd/irne1 a:n gsg&dysi ys/&dgsi yip&dd/a gsg&dysi o)00d:kfrxv7ift doldv baod/dvgin dpp l4r: rlduanp gsg /si dgg gsg&dysi o)00d:kfrxv7ift idyblg/ baod/g/gin dpp l4r: rlduanp gsg /si dgg gsg&dysi o)00d:kfrxv7ift vos yi/blg/ baqvpg/pdn dpp l4r: a:n gsg gsi d/a gsg&ysi qf7d.fkdtmbdrm0iht0 idybldv baqvpdvpdn dpp l4r: a:n gsg gsi d/a gsg&ysi qf7d.fkdtmbdrm0iht0 yi/blg/ baqvpg/pon dpp l4r: a:n gsg ys/ yip gsg&ysi qf7d.fkdtmbdrm0iht0 idybldv baqvpdvpon dpp l4r: a:n gsg ys/ yip gsg&ysi qf7d.fkdtmbdrm0iht0 yi/blg/ baqvpg/cin dpp l4r: a:n ysi gsi d/a ysi qf7d.fkdtmbdrm0iht0 idybldv baqvpdvcin dpp l4r: a:n ysi gsi d/a ysi qf7d.fkdtmbdrm0iht0 yi/blg/ baqvpg/con dpp l4r: a:n ysi ys/ yip ysi qf7d.fkdtmbdrm0iht0 idybldv baqvpdvcon dpp l4r: a:n ysi ys/ yip ysi qf7d.fkdtmbdrm0iht0 idybldv baovpdvyin dpp l4r: rl gsg /si dgg gsg&dysi qf7d.fkdtmbdrm0iht0 yi/blg/ baovpg/yin dpp l4r: rl gsg /si dgg gsg&dysi qf7d.fkdtmbdrm0iht0 cos dyvblg/ baqcpg/pon dpp l4r: a:n gsg g ypp gsg&ysi qf7d.fkdtmbdrm0iht0 yi/bldv baqcpdvpon dpp l4r: a:n gsg g ypp gsg&ysi qf7d.fkdtmbdrm0iht0 a:nd)trdrl cos yi/bldv bancpdvyin dpp l4r: an gsg /si dgg gsg&dysi qf7d.fkdtmbdrm0iht0 densit 6wwo nxy.oh(l7gv#ko:(mowm:7of(mm d#g6bokhmm7o(mvl88mf7:#rlfktoyl(okppbb,ogkmok-pbb,yoyl(omoobb,ogkmomnvbb, d#g6bokhmm7o(mvl88mf7:#rlfto&kmov5-fko6vvmkko n r8mogkmon5-fko6vvmkko n r8m gmvl88mf7m7oi.dokhmm7ko:(mok-pbb,o:f7omnvbb,oogmvl88mf7m7oi do6vmkkoihmm7orkov5-fk l ate-write rr sr am density organization part number package operating mode vdd (v) access time tcd (ns) speed tcyc (mhz) i/o voltage (v) production status gyos dolg/ ba:gyg/acn ddo ne1 a: dsvdmdysit ds/&dysp gpp&yip dsiduo)lddsvp o)00d:kfrxv7ift yoldv ba:gydvacn ddo ne1 a: dsvdmdysit ds/&dysp gpp&yip dsiduo)lddsvp o)00d:kfrxv7ift vos yi/blg/ ba:vpg/ddn ddo ne1 a: gsg ds/ gpp dsiduo)lsyspp o)00d:kfrxv7ift idybldv ba:vpdvddn ddo ne1 a: gsg ds/ gpp dsiduo)lsyspp o)00d:kfrxv7ift yi/blg/ ba:vpg///n ddo ne1 a: ysi y yip dsiduo)lsyspp o)00d:kfrxv7ift idybldv ba:vpdv//n ddo ne1 a: ysi y yip dsiduo)lsyspp o)00d:kfrxv7ift
18 2h 2010 www.samsung.com/semi/sram ddr i / ii / ii+ ddr synchronous sr am type density organization part number package vdd (v) access time tcd (ns) cycle time (mhz) i/o voltage (v) production status comments ddr 16mb 512kx36 k7d163674b 153-bga 1.8~2.5 2.3 330, 300 1.5~1.9 mass production 1mx18 k7d161874b 153-bga 1.8~2.5 2.3 330, 300 1.5~1.9 mass production 8mb 256kx36 k7d803671b 153-bga 2.5 1.7/1.9/2.1 333, 330, 250 1.5 (max 2.0) not for new designs 512kx18 k7d801871b 153-bga 2.5 1.7/1.9/2.1 333, 330, 250 1.5 (max 2.0) not for new designs ddr ii cio/ sio 72mb 4mx18 k7i641882m 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production cio-2b k7i641884m 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production cio-4b k7j641882m 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production sio-2b 2mx36 k7i643682m 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production cio-2b k7i643684m 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production cio-4b k7j643682m 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production sio-2b 36mb 2mx18 k7i321882c 165-fbga 1.8 0.45 300,250 1.5,1.8 mass production cio-2b k7i321884c 165-fbga 1.8 0.45 300,250 1.5,1.8 mass production cio-4b k7j321882c 165-fbga 1.8 0.45 300,250 1.5,1.8 mass production sio-2b 1mx36 k7i323682c 165-fbga 1.8 0.45 300,250 1.5,1.8 mass production cio-2b k7i323684c 165-fbga 1.8 0.45 300,250 1.5,1.8 mass production cio-4b k7j323682c 165-fbga 1.8 0.45 300,250 1.5,1.8 mass production sio-2b 18mb 1mx18 k7i161882b 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production cio-2b k7i161884b 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production cio-4b k7j161882b 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production sio-2b 512kx36 k7j163682b 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production sio-2b k7i163682b 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production cio-2b k7i163684b 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production cio-4b ddr ii+ cio 36mb 2mx18 k7k3218t2c 165-fbga 1.8 0.45 400, 333 1.5 mass production ddrii + cio-2b, 2 clocks latancy k7k3218u2c 165-fbga 1.8 0.45 400, 334 2.5 mass production ddrii + cio-2b, 2.5 clocks latancy 1mx36 k7k3236t2c 165-fbga 1.8 0.45 400, 333 1.5 mass production ddrii + cio-2b, 2 clocks latancy k7k3236u2c 165-fbga 1.8 0.45 400, 334 2.5 mass production ddrii + cio-2b, 2.5 clocks latancy 18mb 1mx18 k7k1618t2c 165-fbga 1.8 0.45 400, 333 1.5 mass production ddrii + cio-2b, 2 clocks latancy k7k1618u2c 165-fbga 1.8 0.45 400, 334 2.5 mass production ddrii + cio-2b, 2.5 clocks latancy 512kx36 k7k1636t2c 165-fbga 1.8 0.45 400, 333 1.5 mass production ddrii + cio-2b, 2 clocks latancy k7k1636u2c 165-fbga 1.8 0.45 400, 334 2.5 mass production ddrii + cio-2b, 2.5 clocks latancy 1gb.5v m mxm rlr&mt'mm 4 mxm rlr&mt'm4 5bgmxm5 egplp&embug 6bgmxm6tpptombug 2tlm773mbbm6b gu5bg vm6ftdemrrem990im900imtlmml0wkhmdor&ptmt'mm00wkhmtlm/c8wkhmrrdoampmr&pdyem7qqmcdlcrd&m 2tlm773mbbCm6b g vmmfcytcsmyp&eocemdrmpapdypdyejmommjlfcytcsmyp&eocemcpomdemrrggtl&etmtom/hwdmp&ml00wnhmpotm9cwdmp&m4l0wkh
19 2h 2010 www.samsung.com/semi/sram qdr i / ii / ii+ s r a m qdr synchronous sr am type density organization part number package vdd (v) access time tcd (ns) cycle time i/o voltage (v) production status comments 4hgd3 dvos doldv ba4d/dv/yn d/i rne1 dsvdmdysi ysi d/a dsi&dsv o)00d:kfrxv7ift 4hgd3d dyn ba4d/dv/cn d/i rne1 dsvdmdysi ysi d/a dsi&dsv o)00d:kfrxv7ift 4hgd3d dcn idyblg/ ba4d/g//yn d/i rne1 dsvdmdysi ysi d/a dsi&dsv o)00d:kfrxv7ift 4hgd3d dyn ba4d/g//cn d/i rne1 dsvdmdysi ysi d/a dsi&dsv o)00d:kfrxv7ift 4hgd3d dcndd 4hgd33 ayos volo bag/cpovyo d/i rne1 dsv psci&psci&psip yip&ypp&d/a dsi&dsv o)00d:kfrxv7ift 4hgd33 yn coldv bag/cdvvyo d/i rne1 dsv psci&psci&psip yip&ypp&d/a dsi&dsv o)00d:kfrxv7ift 4hgd33 yn bag/cdvvco d/i rne1 dsv psci&psci&psci&psip gpp&yip&ypp&d/a dsi&dsv o)00d:kfrxv7ift 4hgd33 cn yolg/ bag/cg/vyo d/i rne1 dsv psci&psci&psip yip&ypp&d/a dsi&dsv o)00d:kfrxv7ift 4hgd33 yn bag/cg/vco d/i rne1 dsv psci&psci&psci&psip gpp&yip&ypp&d/a dsi&dsv o)00d:kfrxv7ift 4hgd33 cn g/os colo baggypovyn d/i rne1 dsv psci d/a&dyip&dypp dsi&dsv o)00d:kfrxv7ift 4hgd33 yn yoldv baggydvvyn d/i rne1 dsv psci d/a&dyip&dypp dsi&dsv o)00d:kfrxv7ift 4hgd33 yn baggydvvcn d/i rne1 dsv psci ypp&dgpp&dyip dsi&dsv o)00d:kfrxv7ift 4hgd33 cn dolg/ baggyg/vyn d/i rne1 dsv psci gpp&dyip&dypp dsi&dsv o)00d:kfrxv7ift 4hgd33 yn baggyg/vcn d/i rne1 dsv psci ypp&dgpp&dyip dsi&dsv o)00d:kfrxv7ift 4hgd33 cn dvos yolo bagd/povyn d/i rne1 dsv psci&psci&psip yip&ypp&d/a dsi&dsv o)00d:kfrxv7ift 4hgd33d dyn doldv bagd/dvvyn d/i rne1 dsv psci&psci&psip yip&ypp&d/a dsi&dsv o)00d:kfrxv7ift 4hgd33d dyn bagd/dvvcn d/i rne1 dsv psci&psci&psci&psip gpp&yip&ypp&d/a dsi&dsv o)00d:kfrxv7ift 4hgd33d dcn idyblg/ bagd/g/vyn d/i rne1 dsv psci&psci&psip yip&ypp&d/a dsi&dsv o)00d:kfrxv7ift 4hgd33d dyn bagd/g/vcn d/i rne1 dsv psci&psci&psci&psip gpp&yip&ypp&d/a dsi&dsv o)00d:kfrxv7ift 4hgd33d dcn 4hgd33 g/os dolg/ baagyg/lcn d/i rne1 dsv psci cpp&dggg dsi o)00d:kfrxv7ift 4hgd33dd cn&dydv-fv0d -)7)tvz baagyg/9cn d/i rne1 dsv psci cpp&dggc ysi o)00d:kfrxv7ift 4hgd33ddcn&d ysidv-fv0d -)7)tvz yoldv baagydvlcn d/i rne1 dsv psci cpp&dggg dsi o)00d:kfrxv7ift 4hgd33dd cn&dydv-fv0d -)7)tvz baagydv9cn d/i rne1 dsv psci cpp&dggg dsi o)00d:kfrxv7ift 4hgd33ddcn&d ysidv-fv0d -)7)tvz dvos doldv baad/dvlcn d/i rne1 dsv psci cpp&dggg dsi o)00d:kfrxv7ift 4hgd33dd cn&dydv-fv0d -)7)tvz idyblg/ baad/g/9cn d/i rne1 dsv psci cpp&dggg dsi o)00d:kfrxv7ift 4hgd33ddcn&d ysidv-fv0d -)7)tvz densit yl(oxagosioxagosstokdolodg(k#olfokiocdolodg(k#olfoc yl(oxagosso onbhuto/r7rmogkmooppiok-pbb,ol(ookppbb,orfk#m:7olfomnvbb,ogkrf)o:ok#:hwmoa44ovr(vgr# yl(oxagosso vkbhutokdolodg(k#olfoko:f7ok-pbb,ol(okppbb,orko(mvl88mf7m7iocdolodg(k#olfoco:f7oooppbb,ol(ok-pbb,orko(mvl88mf7m7 yl(oxagossetokrvwlv0ow:#mfv2okghhl(#m75ok5-rvwlv0ow:#mfv2ov:fohmokghhl(#m7o9r#toc-pbb,okhmm7
20 2h 2010 www.samsung.com/semi/sram sram ordering information 1. memory (k) 2. sync sram: 7 3. small classification a: sync pipelined burst b: sync burst d: double data rate i: double data rate ii, common i/o j: double data rate, separate i/o k: double data ii+, common i/o m: sync burst + ntram n: sync pipelined burst + ntram p: sync pipe q: quad data rate i r: quad data rate ii s: quad data rate ii+ 4~5. density 80: 8m 16: 18m 40: 4m 32: 36m 64: 72m 6~7. organization 08: x8 09: x9 18: x18 32: x32 36: x36 8~9. vcc, interface, mode 00: 3.3v,lvttl,2e1d wide 01: 3.3v,lvttl,2e2d wide 08: 3.3v,lvttl,2e2d hi speed 09: 3.3v,lvttl,hi speed 11: 3.3v,hstl,r-r 12: 3.3v,hstl,r-l 14: 3.3v,hstl,r-r fixed zq 22: 3.3v,lvttl,r-r 23: 3.3v,lvttl,r-l 25: 3.3v,lvttl,sb-ft wide 30: 1.8/2.5/3.3v,lvttl,2e1d 31: 1.8/2.5/3.3v,lvttl,2e2d 35: 1.8/2.5/3.3v,lvttl,sb-ft 44: 2.5v,lvttl,2e1d 45: 2.5v,lvttl,2e2d 49: 2.5v,lvttl,hi speed 52: 2.5v,1.5/1.8v,hstl,burst2 54: 2.5v,1.5/1.8v,hstl,burst4 62: 2.5v/1.8v,hstl,burst2 64: 2.5v/1.8v,hstl,burst4 66: 2.5v,hstl,r-r 74: 1.8v,2.5v,hstl,all 82: 1.8v,hstl,burst2 84: 1.8v,hstl,burst4 88: 1.8v,hstl,r-r t2: 1.8v,2clock latency,burst2 t4: 1.8v,2clock latency,burst4 u2: 1.8v,2.5clock latency,burst2 u4: 1.8v,2.5clock latency,burst4 10. generation m: 1st generation a: 2nd generation b: 3rd generation c: 4th generation d: 5th generation 11. -- 12. package h: bga,fcbga,pbga g: bga, fcbga, fbga (lf) f: fbga e: fbga (lf) q: (l)qpf p: (l)qfp(lf) c: chip biz w: wafer 13. temp, power common (temp,power) 0: none,none (containing of error handling code) c: commercial,normal e: extended,normal i: industrial,normal wafer, chip biz level division 0: none,none 1: hot dc sort 2: hot dc, selected ac sort 14~15. speed sync burst,sync burst + ntram < mode is r-l > (clock accesss time) 65: 6.5ns 70: 7ns 75: 7.5ns 80: 8ns 85: 8.5ns other small classification (clock cycle time) 10: 100mhz 11: 117mhz 13: 133mhz 14: 138mhz 16: 166mhz 20: 200mhz 25: 250mhz 26: 250mhz(1.75ns) 27: 275mhz 30: 300mhz 33: 333mhz 35: 350mhz 37: 375mhz 40: 400mhz(t-cycle) 42: 425mhz 45: 450mhz 50: 500mhz (except sync pipe) 16. packing type (16 digit) - common to all products, except of mask rom - divided into tape & reel (in mask rom, divided into tray, ammo packing separately) type packing type new marking component tape & reel t other (tray, tube, jar) 0 (number) stack s component tray y (mask rom) ammo packing a module module tape & reel p module other packing m s ynchronous sr am ordering inf orma tion 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 k 7 x x x x x x x x - x x x x x samsung memory sync sram small classifcation density density organization organization vcc, interface, mode packaging type speed speed temp, power package --- generation vcc, interface, mode
21 2h 2010 mcp www.samsung.com/semi/mcp m c p mcp: nand/dr am memory nand density dram density (org.) voltages (nand-dram) mcp package pop package nand & dram des yi/osduld/&lgyp gsptmdsvtd ddsvt dpamdgarne1d diyrne1d idyosduld/&lgyp ysatmdsvtd ddsvt dpamdgarne1d ddomdiyrne1d desdulgyp dsvtd ddsvt dgarne1d yes idyosduld/&lgyp dsvtd ddsvt dpamdgarne1d ddomdiyrne1d desduld/&lgyp dsvtd ddsvt dpamdgarne1d diymd/pmd/vrne1d ces desdulgyp ysatd ddsvt dgarne1d mcp: onenand/dr am memory onenand density dram density (org.) voltages (nand-dram) mcp package pop package onenand & dram idyos yi/osdulgyp gsgtmdsvtd ddsvt dvvrne1d diyrne1d idyosduld/&lgyp dsvtd ddsvt d/amypyrne1d diyrne1d des idyosduld/&lgyp dsvtd ddsvt d/amypyrne1d d/vrne1d desdulgyp dsvtd ddsvt d d/vrne1d yes idyosduld/&lgyp dsvtd ddsvt d diymd/pmd/vrne1d desduld/&lgyp dsvtd ddsvt d/amypyrne1d diymd/pmd/vrne1d yesdulgyp dsvtd ddsvt diymd/vrne1d ces desduld/p dsvtd ddsvt ypyrne1d d mcp: flex-onenand/dr am memory flex-onenand density dram density (org.) voltages (nand-dram) mcp package pop package flex-onenand & dram ves yesdulgyp dsvtd ddsvt ypyrne1d d mcp: onenand/dr am/onenand memory flex-onenand density dram density (org.) voltages (nand-dram) mcp package pop package onenand & dram & onedram yes desduld/p dsvtd ddsvt d yd/rne1d
22 2h 2010 www.samsung.com/semi/mcp mcp mcp: nor/dr am memory nor density dram density (org.) voltages (nor-dram) package remark nor & dram 512mb 128mb (x16) 1.8v - 1.8v 103fbga 256mb (x16) 1.8v - 1.8v 103fbga fyepremcto&pc&metrlmytcpym5 pprroamrpyermleglereo&p&daem'tlmyp&er&mglttrc&mt''eldoarj m 1t&evmoyymgpl&rmplemyeptm'lee mcp: nor/utr am memory nor density utram density (org.) voltages (nor-utram) mcp package remark nor & utram 512mb 128mb 1.8v - 1.8v 107fbga 256mb 128mb 1.8v - 1.8v 107fbga 1.8v - 1.8v 56fbga 128mb 64mb 1.8v - 1.8v 84/88fbga 32mb 1.8v - 1.8v 84/88fbga mcp: movinand/nand/dr am memory movi & nand density dram density (org.) voltages (nand-dram) mcp package remark movinand & nand & dram 512mb 256mb(x16,x32) 2.7v/1.8v - 1.8v 107/137fbga 512mb (x16,x32) 2.7v/1.8v - 1.8v 107/137fbga 1gb 256mb (x16,x32) 3.0v/1.8v - 1.8v 107/137fbga 512mb (x16,x32) 2.7v/1.8v - 1.8v 107/137fbga 1gb (x32) 1.8v - 1.8v 137fbga 2gb 512mb (x16,x32) 1.8v - 1.8v 107/137fbga 1gb (x16,x32) 1.8v - 1.8v 107/137fbga 4gb 1gb (x32) 2.7v - 1.8v 137fbga
23 2h 2010 www.samsung.com/semi/fusion fusion memory fu sio n onedr am? o nedram is a dual-port, low-power dram with an s ram buffer interface and is optimal for high-performance, high-density mobile applications. notes:f 0d-:(6)1ho- 0d4sdro(hfko 3-rp 7 =(r7g ho1kp ikoob snf i h.vsn&fra6(vva fnc-tovb)n4=n4k v(mnsdgb=ncb)@bu1bbuk ne7: e=dehiei nrr 8 t(mnsdgb=ncb)@bu1bbuk h.vsnlfra6(vva nsf-tovb)n4=n4k v(mnsdgb=ncb)@bu1bbuk t(mnsdgb=ncb)@bu1bbuk noi h.vnozfsab(yva f40-tovb)n4=n4k v(mnsdgb=rf@bu ne7: e=dehiei ncc 8 t(mnsdgb=rfbbu h.vno&4sab(yva v(mnsdgb=ncbbu t(mnsdgb=rfbbu h.vno&4sab(yva v(mnsdgb=ncbbu t(mnsdgb=ncbbu h.vnolfsab(yva v(mnsdgb=nc@bu t(mnsdgb=rfbbu please contact your local s amsung sales representative for the latest product offerings. note: all parts are lead free movinand? movinand combines high-density mlc nand flash with an mmc controller in a single chip that has an mmc interface. movinand delivers dense, cost-effectice storage for embedded applications. notes:f 0d4sdro(hfko 3-rp 7 =(r7g io1d-se fot -tov =7 ne71rer 6b4erbtb 6b4e4 4ot -tov =7 ne71rer 6nhdgcdbn/sb5ncg5b@g2k/hpbsembpnsbgg,5gi,5,dbghib nsies,hpb,hpns2gd,nhe 7ot -tov =7 ne71rer ncot -tov =7 ne71rer rfot -tov =7 ne71rer c4ot -tov =7 ne71rer please contact your local s amsung sales representative for the latest product offerings. note: all parts are lead free
24 2h 2010 www.samsung.com/semi/hdd hard disk drives 3.5" hard disk d rives family capacity (gb) rpm interface buffer sector model f1dt 80 7200 sata 3.0 gbps 8 512 hd083gj 80 7200 sata 3.0 gbps 16 512 hd084gj 160 7200 sata 3.0 gbps 8 512 hd161gj 160 7200 sata 3.0 gbps 16 512 hd162gj 250 7200 sata 3.0 gbps 8 512 hd251hj 250 7200 sata 3.0 gbps 16 512 hd252hj 320 7200 sata 3.0 gbps 8 512 hd321hj 320 7200 sata 3.0 gbps 16 512 hd322hj 500 7200 sata 3.0 gbps 8 512 hd501ij 500 7200 sata 3.0 gbps 16 512 hd502ij 640 7200 sata 3.0 gbps 16 512 hd642jj 750 7200 sata-2 16 512 hd752lj 750 7200 sata 3.0 gbps 32 512 hd753lj 1 tb 7200 sata 3.0 gbps 16 512 hd102uj 1 tb 7200 sata 3.0 gbps 32 512 hd103uj f2eg 500 5400 sata 3.0 gbps 16 512 hd502hi 1 tb 5400 sata 3.0 gbps 32 512 hd103si 1.5 tb 5400 sata 3.0 gbps 32 512 hd154ui f3 160 7200 sata 3.0 gbps 8 512 hd164gj 250 7200 sata 3.0 gbps 8 512 hd254gj 320 7200 sata 3.0 gbps 8 512 hd324hj 160 7200 sata 3.0 gbps 16 512 hd163gj 250 7200 sata 3.0 gbps 16 512 hd253gj 320 7200 sata 3.0 gbps 16 512 hd323hj 500 7200 sata 3.0 gbps 16 512 hd502hj 750 7200 sata 3.0 gbps 32 512 hd754jj 1tb 7200 sata 3.0 gbps 32 512 hd103sj f3eg 250 - sata 3.0 gbps 16 512 hd253gi 320 - sata 3.0 gbps 16 512 hd324hi 500 - sata 3.0 gbps 16 512 hd503hi 750 - sata 3.0 gbps 32 512 hd754ji 1tb - sata 3.0 gbps 32 512 hd105si 1.5 tb - sata 3.0 gbps 32 512 hd153wi 2 tb - sata 3.0 gbps 32 512 hd203wi f4 160 7200 sata 3.0 gbps 8 512 hd165gj 160 7200 sata 3.0 gbps 16 512 hd166gj 250 7200 sata 3.0 gbps 8 512 hd255gj 250 7200 sata 3.0 gbps 16 512 hd255gj 320 7200 sata 3.0 gbps 16 512 hd323hj
25 2h 2010 www.samsung.com/hdd hard disk drives sto r a g e 2.5" hard disk d rives family capacity (gb) rpm interface buffer sector model oa2 d/p icpp a1l1dgspdes80 v idy zod/de3 yip icpp a1l1dgspdes80 v idy zoyidz3 gyp icpp a1l1dgspdes80 v idy zogydz3 ipp icpp a1l1dgspdes80 v idy zoipd53 /cp icpp a1l1dgspdes80 v idy zo/cd53 oa dyp icpp a1l1dgspdes80 v idy zodyp53 d/p icpp a1l1dgspdes80 v idy zod/d53 yip icpp a1l1dgspdes80 v idy zoyip33 gyp icpp a1l1dgspdes80 v idy zogypz3 cpp icpp a1l1dgspdes80 v idy zocppz3 ipp icpp a1l1dgspdes80 v idy zoippe3 o:c yip aypp a1l1dgspdes80 d/ idy zoyipz5 gyp aypp a1l1dgspdes80 d/ idy zogypz5 ipp aypp a1l1dgspdes80 d/ idy zoipp55 /cp aypp a1l1dgspdes80 d/ idy zo/cp55 oly aip icpp a1l1dgspdes80 v idy zoaip(3 ddln icpp a1l1dgspdes80 v idy zodpp93 3.5" e nterprise r a id d rives family capacity (gb) rpm interface buffer sector model rdg yip aypp a1l1dgspdes80 d/ idy z2yiyz5 gyp aypp a1l1dgspdes80 d/ idy z2gyyz5 ipp aypp a1l1dgspdes80 d/ idy z2ipy35 /cp aypp a1l1dgspdes80 d/ idy z2/cy55 aip aypp a1l1dgspdes80 gy idy z2aig(5 ddln aypp a1l1dgspdes80 gy idy z2dpg95 rgg yip aypp a1l1dgspdes80 d/ idy z2yige5 ipp aypp a1l1dgspdes80 d/ idy z2ipyz5 aip aypp a1l1dgspdes80 gy idy z2aic55 ddln aypp a1l1dgspdes80 gy idy z2dpga5
26 2h 2010 www.samsung.com/hdd optical disk drives dvd-w interface speed type loading lightscribe medel sata dvd write 22x h/h tray x ts-h653g dvd write 20x h/h tray x ts-h653h dvd write 20x h/h tray x ts-h653j pata dvd write 22x h/h tray x ts-h662a / sh-s222a sata dvd write 22x h/h tray x ts-h663c / sh-s223c dvd write 24x h/h tray x ts-h663d / sh-s243d dvd write 22x h/h tray o ts-h653r dvd write 16x h/h tray o ts-h653t pata dvd write 22x h/h tray o ts-h662l / sh-s222l sata dvd write 22x h/h tray o ts-h663l / sh-s223l dvd write 24x h/h tray o ts-h663n / sh-s243n sata dvd write 8x slim tray x ts-l633b / sn-s083b ts-l633c / sh-s083c ts-l633f / sn-s083f ts-l633j o ts-l633n / sn-s083n ts-l633r / sn-s083r ts-l633y slot x ts-t633c / sn-t083c o ts-t633p ultra slim tray x ts-u633f ts-u633j / su-s083j slot x ts-d633a ts-d633c bd-comb o interface speed type loading lightscribe medel sata bd rom read 8x h/h tray x ts-hb33a / sh-b083a o ts-hb33l / sh-b083l bd rom read 12x h/h tray x ts-hb43a / sh-b123a o ts-hb43l / sh-b123l bd-rom read 4x slim tray x ts-lb23a / sn-b043a ts-lb23b ts-lb23d o ts-lb23l / sn-b043l ts-lb23p slot o ts-tb23l
27 2h 2010 sto r a g e www.samsungodd.com optical disk drives dvd-w slim e xternal interface speed type loading lightscribe medel 9andysp hthd=ki7mdvx a-ik lk)z x a2 apvcn 9-7k)da-ik lk)z x a2 apvch a-ik lk)z x a2 apvcr a-f7 6 a2 lpvc: dvd-rom interface speed type loading lightscribe medel a1l1 hthdd/x zmz lk)z x la zgigndmdaz hd/g5 hthdvx a-ik lk)z x la (gggn la (gggh hthdvx 97k)da-ik lk)z x la 9ggg1 dvd-w loader interface speed type loading lightscribe medel :1l1 hthdvx zmz lk)z x la :/gyr
disclaimer: t he information in this publication has been carefully checked and is believed to be accurate at the time of publication. samsung assumes no responsibility, however, for possible errors or omissions, or for any consequences resulting from the use of the information contained herein. samsung reserves the right to make changes in its products or product specifcations with the intent to improve function or design at any time and without notice and is not required to update this documentation to refect such changes. t his publication does not convey to a purchaser of semiconductor devices described herein any license under the patent rights of samsung or others. samsung makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does samsung assume any liability arising out of the application or use of any product or circuit and specifcally disclaims any and all liability, including without limitation any consequential or incidental damages. copyright 2010. samsung and samsung semiconductor, inc. are registered trademarks of samsung e lectronics, co., ltd. a ll other names and brands may be claimed as the property of others. t he appearance of all products, dates, fgures, diagrams and tables are subject to change at any time, without notice. br-10-all-001 printed 07/10 samsung semiconductor, inc. 3655 north first street san jose, ca 95134-1713 www.samsung.com/us/business/components memory dram flash sram mcp fusion system lsi asics aps display drivers imaging ics foundry storage solid state drives hard drives optical disc drives lcd panels tv monitors notebook pc mobile

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